Description
This report will include the simulation data and results related to the calculation of the LET distribution and its evolution as it transverses the various materials in the beamline or of an electronic device. This analysis will be devoted to various levels of device integration and will provide a building block for the experimental measurements. It will also include a benchmark against measurements, such as those retrieved from solid-state detectors. Moreover, this report will discuss the models that are required for the correct physical simulation of VHE ion interaction in semiconductor devices and compare them with those required for standard energy ions. It will also include the appropriate techniques required to model medium complexity devices.
Details
| Work Package No. | WP3 |
| Deliverable Related No. | D3.4 |
| Deliverable No. | D8 |
| Lead Beneficiary | CERN |
| Type | Report |
| Dissemination Level | Public |
| Due Date | 2025-12-31 |
| Delivery Date | n/a |
| Approval Date | n/a |
| Status | Pending |
Deliverable Report
D3.4 report is not available yet.