This report will discuss the models that are required for the correct physical simulation of VHE ion interaction in semiconductor devices and compare them with those required for standard energy ions. The report will also include the appropriate techniques required to model medium complexity devices.
|Work Package No.||WP3|
|Deliverable Related No.||D3.5|
|New Due Date (if delay)||n/a|
D3.5 report is not available yet.